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Method of wafer-level hermetic packaging with vertical feedthroughs

机译:具有垂直馈通的晶片级气密包装的方法

摘要

A wafer-level packaging method for MEMS structures that are desired to be encapsulated in a hermetic cavity and that need the transfer of at least a single or multiple electrical leads to the outside of the cavity without destroying the hermeticity of the cavity. Lead transfer is achieved using vertical feedthroughs that are patterned on the capping substrate within the same fabrication step to produce the encapsulating cavity. Furthermore, the structure of the vertical feedthroughs and via openings to reach these feedthroughs are arranged in such a way that conventional wirebonding would be sufficient to connect the vertical feedthroughs to the outer world, without a need for conductor-refill inside the via openings. The method is compatible with low-temperature thermocompression-based bonding/sealing processes using various sealing materials such as thin-film metals and alloys, and also with the silicon-glass anodic or silicon-silicon fusion bonding processes.
机译:用于MEMS结构的晶片级封装方法,其期望被封装在气密腔中并且需要将至少单根或多根电导线转移到腔体的外部而不破坏腔体的气密性。使用垂直馈通实现引线转移,该垂直馈通在同一制造步骤中在封盖基板上进行图案化以产生封装腔。此外,垂直引线和通向这些引线的通孔的结构被布置成使得常规的引线接合将足以将竖直引线连接到外部世界,而不需要在通孔内部重新填充导体。该方法与使用诸如薄膜金属和合金之类的各种密封材料的基于低温热压的粘合/密封工艺以及硅-玻璃阳极或硅-硅熔融粘合工艺兼容。

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