Operating memory devices to apply a programming potential to a memory cell in a string coupled to a source and data line concurrently with biasing the data line to a greater potential than the source

摘要

Methods of biasing in memory devices facilitate memory device programming operations. In at least one embodiment, a first string of memory cells comprising a selected memory cell and a second string of memory cells are coupled to a common data line and a common source, where the data line is biased to a potential greater than a potential to which the source is biased during a programming operation performed on the selected memory cell.