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Semiconductor devices including a stressor in a recess and methods of forming the same
Semiconductor devices including a stressor in a recess and methods of forming the same
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机译:在凹槽中包括应力源的半导体器件及其形成方法
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摘要
Semiconductor devices including a stressor in a recess and methods of forming the semiconductor devices are provided. The methods may include forming a fast etching region comprising phosphorous in an active region and forming a first trench in the active region by recessing the fast etching region. The methods may also include forming a second trench in the active region by enlarging the first trench using a directional etch process and forming a stressor in the second trench. The second trench may include a notched portion of the active region.
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