A method to generate chemo-epitaxy masks includes receiving a device pattern comprising a plurality of device geometries, wherein the device pattern conforms to chemo-epitaxy constraints, enlarging the device geometries along a width of the device geometries to provide enlarged device geometries, and using the enlarged device geometries to generate at least one chemo-epitaxy mask corresponding to the device pattern. The at least one chemo-epitaxy mask may include a neutral hard mask and one or more cut masks. The method may also include bridging device geometries that are within a selected distance along a length of the device geometries and merging device geometries that overlap. The method may also include filling break regions between the device geometries with a neutral fill pattern. A corresponding computer program product and computer system are also disclosed herein.
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