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GRADED IN-SITU CHARGE TRAPPING LAYERS TO ENABLE ELECTROSTATIC CHUCKING AND EXCELLENT PARTICLE PERFORMANCE FOR BORON-DOPED CARBON FILMS
GRADED IN-SITU CHARGE TRAPPING LAYERS TO ENABLE ELECTROSTATIC CHUCKING AND EXCELLENT PARTICLE PERFORMANCE FOR BORON-DOPED CARBON FILMS
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机译:梯度的原位电荷陷阱层可实现掺硼碳膜的静电卡盘和出色的颗粒性能
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摘要
The present disclosure generally relates to processing chamber seasoning layers having a graded composition. In one example, the seasoning layer is a boron-carbon-nitride (BCN) film. The BCN film may have a greater composition of boron at the base of the film. As the BCN film is deposited, the boron concentration may approach zero, while the relative carbon and nitrogen concentration increases. The BCN film may be deposited by initially co-flowing a boron precursor, a carbon precursor, and a nitrogen precursor. After a first period of time, the flow rate of the boron precursor may be reduced. As the flow rate of boron precursor is reduced, RF power may be applied to generate a plasma during deposition of the seasoning layer.
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