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WAFER SURFACE 3-D TOPOGRAPHY MAPPING BASED ON IN-SITU TILT MEASUREMENTS IN CHEMICAL VAPOR DEPOSITION SYSTEMS
WAFER SURFACE 3-D TOPOGRAPHY MAPPING BASED ON IN-SITU TILT MEASUREMENTS IN CHEMICAL VAPOR DEPOSITION SYSTEMS
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机译:基于原位倾斜测量的化学气相沉积系统的晶圆表面3D地形成像
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摘要
The surface topography of at least one wafer can be determined in-situ based on deflectometer measurements of surface tilt. The deflectometer is re-positioned by a scanning positioner to facilitate tilt mapping of the wafer surface for each of the at least one wafer. A surface height mapping engine is configured to generate a three-dimensional topographic mapping of the surface of each of the at least one wafer based on the mapping of the tilt.
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