Apparatus and methods of forming a conductive transparent oxide film layer for use in a cadmium telluride based thin film photovoltaic device

摘要

#$%^&*AU2011202979B820161117.pdf#####APPARATUS AND METHODS OF FORMING A CONDUCTIVE TRANSPARENT OXIDE FILM LAYER FOR USE IN A CADMIUM TELLURIDE BASED THIN FILM PHOTOVOLTAIC DEVICE ABSTRACT OF THE DISCLOSURE Methods for forming a TCO layer on a substrate are generally provided and include sputtering a TCO layer on a substrate from a target including cadmium stannate. A cap material (e.g., including cadmium) is deposited onto an outer surface of an indirect anneal system, and the TCO layer can be annealed at an anneal temperature while in contact with or within about 10 cm of the cap material. An anneal oven is also generally provided and includes an indirect anneal system defining a deposition surface and an anneal surface such that a cap material deposited on the anneal surface of the indirect anneal system is positioned to be in contact with or within about 10 cm of a thin film on the substrate. A cap material source can be positioned to deposit the cap material onto the deposition surface such that the anneal surface comprises the cap material.2/5 30 32 Forming a TCO layer on a glass substrate 34 Forming a resistive transparent layer on the TCO layer 36 Forming a cadmium sulfide layer on the resistive transparent layer 38 Forming a cadmium telluride layer on the cadmium sulfide layer 40 Annealing the cadmium telluride layer in the presence of cadmium chloride 42 Washing the surface of the cadmium telluride layer to remove oxides 44 Doping the cadmium telluride layer with copper 46 Applying back contact layer(s) over the cadmium telluride layer 48 Applying an encapsulating glass over the back contact layer(s) Fig. 2