CASCODE RADIO-FREQUENCY POWER AMPLIFIER FOR GSM/DCS

摘要

Disclosed is a cascode radio-frequency power amplifier for a GSM/DCS, comprising a GSM frequency-band cascode power amplifier circuit composed of a first radio-frequency transistor and a second radio-frequency transistor and a DCS frequency-band cascode power amplifier circuit composed of a third radio-frequency transistor and a fourth radio-frequency transistor. The GSM frequency-band cascode power amplifier circuit and the DCS frequency-band cascode power amplifier circuit share one common-gate gate decoupling capacitor. A first bias circuit and a second bias circuit of the GSM frequency-band cascode power amplifier circuit and a third bias circuit and a fourth bias circuit of the DCS frequency-band cascode power amplifier circuit are connected to a power control unit, wherein the power control unit has at least one control signal end for regulating output bias voltages of the four bias circuits. The four transistors adopt the GaAs E/D pHEMT technology, thereby having the advantages of high performance and low costs.