LARGE-AREA VANADIUM OXIDE SEMICONDUCTOR THIN-FILM GROWTH TYPE PID CONTROL SPUTTERING SYSTEM

摘要

The present invention relates to a large-area VO₂ semiconductor thin-film growth type PID control sputtering system comprising: a PID control type sputtering gun; a PID temperature control type thin-film growth heater; an ultrafine flow rate gas supply line; and a thin-film substrate. The system further comprises: a temperature sensor, coupled to one end of the sputtering gun, for measuring the temperature of the sputtering gun; a flow rate measurement sensor, coupled to one end of the sputtering gun, for detecting flow of a coolant in order to prevent heating of the sputtering gun; a valve, coupled to the other end of the sputtering gun, for controlling the flow of the coolant; and a digital drive circuit which receives a signal from the temperature sensor and the flow rate measurement sensor so as to control the sputtering gun and the valve. Accordingly, because of having a PID feedback structure, the quality of a VO₂ thin-film is very stable in terms of growth conditions compared to high quality growth conditions and conventional methods. Further, compared to conventional technologies in which the quality of a thin-film having a particle-type structure and high density is inconsistently produced even under the same conditions, the present invention can secure the quality of a thin-film having a very highly reproducible structure. Therefore, by means of such a result, it is possible to have an effect of increasing the current density of a VO₂ thin-film and also enabling the transition temperature variance to be consistent. In addition, it is expected that the effect of the present invention may be utilized for the purpose of achieving stability and reproducibility of a base apparatus by designing, in the form of an individual PID sensor, the base apparatus in apparatuses used in a conventional physical vapor deposition (PVD).