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Effect of temperature on the growth of vanadium oxide films deposited by DC reactive magnetron sputtering

机译:温度对直流反应磁控溅射沉积钒氧化物薄膜生长的影响

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Vanadium oxide films were prepared onto glass and KBr substrates at various deposition temperatures by DC reactive magnetron sputtering. X-Ray photoelectron spectroscopy (XPS), Atomic force microscope (AFM), Fourier transform infrared spectroscopy (FT-IR) were employed to analyze the VOx films, respectively. Experimental results indicated that deposition temperature has a great impact on the surface morphology of vanadium oxide films. The XPS analysis confirmed that the vanadium oxide films prepared are V2O5. From Fourier transform infrared spectroscopy, it can be see that the infrared active mode corresponding to V-O-V stretching vibration and the stretching vibration of unshared V=O bonds appeared at about 840 cm"1 and 915 cm"1 in the films formed at 240 °C, respectively. A shift in the peak position towards higher frequency was found with increasing the deposition temperature which indicated that the films formed at higher deposition temperature were structural disorder.
机译:通过直流反应磁控溅射在不同的沉积温度下,在玻璃和KBr基板上制备了氧化钒膜。利用X射线光电子能谱(XPS),原子力显微镜(AFM),傅里叶变换红外光谱(FT-IR)对VOx薄膜进行了分析。实验结果表明,沉积温度对氧化钒薄膜的表面形貌有很大影响。 XPS分析证实,所制备的钒氧化物膜为V 2 O 5。从傅立叶变换红外光谱中可以看出,在240°C形成的薄膜中,对应于VOV拉伸振动和未共享的V = O键的拉伸振动的红外激活模式出现在约840 cm“ 1和915 cm” 1 , 分别。随着沉积温度的升高,发现峰值位置向更高的频率偏移,这表明在较高的沉积温度下形成的膜是结构无序的。

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