Method of preparing an electrical insulation film and application for the metallization of through-vias

摘要

The invention relates essentially to a kind of electric conductors or semiconductor substrate prepared at electrical insulating film surface, such as silicon substrate. According to the present invention, the method includes: one kind) make the surface and liquid solution, comprising: proton solvent; At least one diazonium sa At least one polymerisable monomer is chain polymerization and dissolves in the proton solvent; At least one acid is being enough to stablize the diazonium salt, by being adjusted to the pH value of the solution less than 7, preferably smaller than 2.5; The polarization surface of step b) is enough to be formed film at least 60 nanometers of thickness according to the duration of potentio- or positive electric pulse mode, is preferably between 80 and 500 nanometers. Using: the through-hole of metallization, especially 3D integrated circuits.