首页> 外国专利> METHOD OF PREPARING AN ELECTRICAL INSULATION FILM AND APPLICATION FOR THE METALLIZATION OF THROUGH-VIAS

METHOD OF PREPARING AN ELECTRICAL INSULATION FILM AND APPLICATION FOR THE METALLIZATION OF THROUGH-VIAS

机译:电绝缘膜的制备方法及其在通孔金属化中的应用

摘要

The present invention relates essentially to a process for preparing aelectrically insulating film on the surfacea conductive or semiconductive substrate of the electricity, such as asilicon substrate. According to the invention, this process comprises :a) the contact of said surface with a liquid solution comprising :a protic solvent, at least a diazonium saat least one polymerizable monomer in the chain and soluble in said solventprotic; at least one acid in an amountsufficient to stabilize said diazonium salt by adjusting the ph ofsaid solution to a value less than 7, preferablyless than 2,5; b) the polarization of said surface in a mode potentiometer-electroplating - pulsed or for a sufficient time toform a film having a thickness of at least 60 nanometers, andpreferably, between 80 and 500 nanometers.The application: metallization of the vias, through orifices, in particular of circuitsintegrated 3d.
机译:本发明主要涉及一种在电的导电或半导电衬底,例如硅衬底的表面上制备电绝缘膜的方法。根据本发明,该方法包括:a)使所述表面与液体溶液接触,所述液体溶液包括:质子溶剂,至少重氮盐;链中的至少一种可聚合单体并且可溶于所述溶剂质子;通过调节所述溶液的pH值至小于7,优选小于2.5,足以稳定所述重氮盐的量的至少一种酸; b)在模式电位计电镀中以脉冲或足够的时间使所述表面极化,以形成厚度至少为60纳米,优选为80至500纳米的膜。应用:通孔,通孔的金属化,尤其是集成3d的电路。

著录项

  • 公开/公告号CA2728498C

    专利类型

  • 公开/公告日2018-08-14

    原文格式PDF

  • 申请/专利权人 ALCHIMER;

    申请/专利号CA20092728498

  • 申请日2009-07-01

  • 分类号C09D5/44;C25D7/12;C25D13/04;C25D13/08;H01L21/02;H01L21/288;H01L23/52;

  • 国家 CA

  • 入库时间 2022-08-21 12:48:19

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