CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION FOR EB OR EUV LITHOGRAPHY AND PATTERNING PROCESS

摘要

The present invention relates to (A) a polymer compound or a mixture of a polymer compound in which a film formed by a mixture of a polymer compound or a polymer compound is insoluble in an alkaline developer and changes solubility by the action of an acid, (B) an acid generator, (C) a basic compound for inhibiting the action of an acid, and (D) a solvent, The component (C) is a macromolecular compound having a repeating unit having a side chain having a secondary or tertiary amine structure as a basic active site, and is a part or all of the macromolecular compound (A) Amplified positive resist composition. According to the present invention, in the formation of a resist pattern requiring ultrafine patterning, the presence of a base can be made uniform by using the chemically amplified positive resist composition, thereby improving line edge roughness and suppressing temperature dependency And can provide a chemically amplified positive resist composition which can expect a high resolution.