FIN TRANSISTOR, METHOD FOR FABRICATING FIN TRANSISTOR AND ELECTRONIC DEVICE INCLUDING SAME

摘要

According to embodiments of the present invention, provided are a fin transistor having excellent characteristics, a method for fabricating a fin transistor and an electronic device including the same, which can ensure the effective channel length and increase an operating current size. The fin transistor according to an embodiment of the present invention comprises: a substrate having an element separation area and a plurality of active areas; an insulation layer having a trench crossing the element separation area and the active areas on the substrate; a gate buried in the trench; fins formed on the active areas and protruding from the element separation area; and dummy fins formed on both side walls of the fin in the direction of the trench.;COPYRIGHT KIPO 2017