STEEP-SLOPE TRANSISTOR USING HETEROGENEOUS JUNCTION OF SWITCHING ELEMENT AND SEMICONDUCTOR

摘要

Suggested are a steep-slope transistor using the heterogeneous junction of a switching element and a semiconductor and a manufacturing method thereof. The steep-slope transistor using the heterogeneous junction of a switching element and a semiconductor suggested in the present invention includes a metallic source and a metallic drain or the semiconductor doped with any one material of a p-type material and an n-type material, a channel which is located between the source and the drain and includes a switching region and a semiconductor region by bonding a switching material and a semiconductor material, and a gate which controls the semiconductor region of the channel. Accordingly, the present invention can suggest the transistor which efficiently operates in a low power circuit by reducing the sub-threshold swing of the transistor.;COPYRIGHT KIPO 2017