Semiconductor and Switching material Hetero-junction steep-slope Transistor

摘要

A steeper transistor using a heterojunction of a semiconductor and a switching element and a manufacturing method thereof are disclosed. The staggered transistor using the semiconductor and the switching element heterojunction proposed in the present invention is a semiconductor or metallic source and drain doped with any one of a P-type material and an n-type material, a semiconductor material and a semiconductor material located between the source and the drain, A channel including a semiconductor region and a switching region by joining a switching material, and a gate controlling a semiconductor region of the channel.