3D : Si SiGe Ge ATOMIC LAYER ETCHING 3D STRUCTURES: SI AND SIGE AND GE SMOOTHNESS ON HORIZONTAL AND VERTICAL SURFACES

摘要

The present invention relates to methods and apparatuses for etching semiconductor materials on substrates by using atomic layer etching by chemisorption, deposition, or both chemisorption and deposition mechanisms in combination with oxide passivation. The methods involving atomic layer etching using a chemisorption mechanism comprises the steps of: exposing a semiconductor material to chlorine to chemisorb the chlorine on a substrate surface; and exposing a modified surface to argon to remove the modified surface. The Methods involving atomic layer etching using a deposition mechanism comprises the steps of: depositing the substrate surface and exposing the semiconductor material to sulfur-containing gas and hydrogen to modify the substrate surface; and removing the modified surface.