(i) loading the [3] -radialene p-dopant into an evaporation source, and (ii) evaporating the [3] -radialene p-dopant at an increased temperature and reduced pressure to produce an electrically doped semiconductor material comprising [3] -radialene p-dopant. Or [3] -radialene p-dopants, a method for producing an electronic device comprising a [3] -radialene compound, and a semiconductor material and a layer comprising the compound, / RTI [3] -radialene p-dopant has a structure according to the following formula (I): Wherein A 1 and A 2 are independently an aryl- or heteroaryl-substituted cyanomethylidene group, Aryl and / or heteroaryl in A 1 and A 2 are independently selected from the group consisting of 4-cyano-2,3,5,6-tetrafluorophenyl, 2,3,5,6-tetrafluoropyridin-4-yl, 4 (Trifluoromethyl) -3,5,6-trifluorophenyl, 2,5-bis (trifluoromethyl) -3, 5-trifluoromethyl-2,3,5,6-tetrafluorophenyl, 2,4- , 2,4,6-tris (trifluoromethyl) -1,3-diazin-5-yl, 3,4-dicyano-2,5,6-trifluorophenyl, 2-trifluoromethyl-3,5,6-trifluoropyridin-4-yl, 2,5,6-trifluoro-1, Diazin-4-yl and 3-trifluoromethyl-4-cyano-2,5,6-trifluorophenyl, At least one aryl or heteroaryl is selected from the group consisting of 2,3,5,6-tetrafluoropyridin-4-yl, 2,4-bis (trifluoromethyl) -3,5,6-trifluorophenyl, (Trifluoromethyl) -3,4,6-trifluorophenyl, 2,4,6-tris (trifluoromethyl) -1,3-diazin-5-yl, 3,4- Trifluorophenyl, 2-cyano-3,5,6-trifluoropyridin-4-yl, 2-trifluoromethyl-3,5,6-trifluoropyridin- 6-trifluoro-1,3-diazin-4-yl or 3-trifluoromethyl-4-cyano-2,5,6-trifluorophenyl, with the proviso that in both A 1 and A 2 , Tetrafluoropyridin-4-yl can not simultaneously be 2,3,5,6-tetrafluoropyridin-4-yl.
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