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Substituted 1,2,3-triylidenetris(cyanomethanylylidene) cyclopropanes for VTE, electronic devices and semiconducting materials using them
Substituted 1,2,3-triylidenetris(cyanomethanylylidene) cyclopropanes for VTE, electronic devices and semiconducting materials using them
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机译:替代1,2,3-三环戊二烯(氰基亚甲基)环丙烷用于VTE,电子设备和使用它们的半导体材料
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摘要
Provided are processes for preparing an electrically doped semiconducting material that includes a [3]-radialene p-dopant. Also provided are processes for preparing an electronic device containing a layer that includes a [3]-radialene p-dopant. The processes may include (i) loading an evaporation source with a [3]-radialene p-dopant and (ii) evaporating the [3]-radialene p-dopant at an elevated temperature and at a reduced pressure. The [3]-radialene p-dopant may be selected from compounds having a structure according to formula (I) herein.
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