manufacturing method of micro GaN LED array and micro GaN LED array thereby

摘要

The present invention relates to a method for manufacturing a micro nitride-based light emitting diode array for a display, and a micro nitride-based light emitting diode array for a display manufactured thereby. The method for manufacturing a micro nitride-based light emitting diode array for a display includes: a first step of forming a dielectric mask layer on a GaN substrate; a second step of forming a nanopattern having a pattern hole exposing a partial area of the GaN substrate by patterning the dielectric mask layer; a third step of selectively growing the n-GaN layer on the GaN substrate having a partial area exposed by the pattern hole of the nanopattern and forming one unit LED structure per pattern hole by sequentially and selectively growing an active layer and a p-GaN layer; a fourth step of forming an n-type electrode on the GaN substrate and deposing an oxide between the unit LED structures; and a fifth step of forming the p-type electrode on the p-GaN substrate. Therefore, the method for manufacturing a micro nitride-based light emitting diode array for a display and the micro nitride-based light emitting diode array for a display manufactured thereby can manufacture a micro light emitting diode array in which the unit LED structures are arranged on a front surface of the substrate by selective growth based on a nitride-based semiconductor and manufacture an LED by a simple and easy process in a bottom-up method rather than an existing top-down method.