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Method for manufacturing GaN LED array device for optogenetics and GaN LED array device for optogenetics
Method for manufacturing GaN LED array device for optogenetics and GaN LED array device for optogenetics
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机译:用于光遗传学的GaN LED阵列器件的制造方法和用于光遗传学的GaN LED阵列器件
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摘要
PURPOSE: A manufacturing method for a GaN(gallium nitride) LED array device for an optogenetics and the GaN LED array device manufactured thereby are provided to easily clarify a nerve circuit by allowing on-off stimulation of a nerve cell through an LED array which independently becomes on/off. CONSTITUTION: A bonding layer(501) is coated on a plastic substrate(500). A first passivation layer(310) is laminated on the bonding layer. A second passivation layer(320) is laminated on the first passivation layer. A third passivation layer(330) is laminated on the second passivation layer. A first contact line(502) is connected to a contact metal on an n-GaN layer. A second metal line(503) is connected to a contact metal on a p-GaN layer.
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