METHOD FOR PRODUCING NANO-PROFILED ULTRA-THIN FILM Al₂O₃ ON SURFACE OF POROUS SILICON

摘要

FIELD: chemistry.;SUBSTANCE: film Al₂O₃ is applied by ion-plasma sputtering to the layer of porous silicon with a pore size of less than 3 nm produced by electrochemical etching of the initial single crystal silicon plate at the operating chamber pressure in the range of 3-5⋅10^-3 mm Hg and the target potential of 400-600 V.;EFFECT: providing an opportunity to create an efficient method for manufacturing a nano-profiled ultra-thin aluminium dioxide film on the surface of porous silicon.;2 cl, 2 dwg