Long annealed integrated circuit arrangements and process for the production thereof

摘要

Integrated circuit arrangement (500, 500b),with an electrically conductive guide structure (506, 506b), which is structured in accordance with a grain structure,electrically conductive barrier material in a grain boundaries region of the guide structure (506, 506b) is arranged, the at least 5 nanometers or of the at least 10 nanometers is arranged in the interior of the guide structure,the circuit arrangement (500, 500b) contains a substrate (501), which contains a plurality of semiconductor components,the guide structure, and wherein a conductive path (506, 506b), wherein the conductive path (506, 506b) between the substrate (501) and a vialeitstruktur (550, 550b) adjacent to the vialeitstruktur (550, 550b) is arranged, wherein the vialeitstruktur (550, 550b) above the conductive path (506, 506b) is arranged,while a side wall of the vialeitstruktur (550, 550b) to a barrier material layer is adjacent and wherein between the vialeitstruktur and the conductive path (506, 506b) is no barrier material layer or not a continuous barrier material layer is arranged,and wherein the vialeitstruktur (550, 550b) to a remote from the conductive path (560, 560b), at the bottom surface of an electrically conductive barrier material layer (530, 530b) borders.