Semiconductor component, in particular power semiconductor component with a charge carrier recombination zones and a method for producing the same

摘要

Semiconductor component, in particular, power semiconductor component with a charge carrier recombination zones (3), wherein the charge carrier recombination zones (3) in a semiconductor body (4), buried in the vicinity of a space charge zones (5) are arranged, wherein the charge carrier recombination zones (3) locally accumulated point defect with argon ions in the half conductor crystal lattice, and wherein the charge carrier recombination zones (3) have such a high temperature resistance, that in the case of metallization - and / or diffusion soldering processes are resistant locally.