首页> 外国专利> Apparatus and method for the manufacture of a free-standing polycrystalline diamond film deposition (cvd) -

Apparatus and method for the manufacture of a free-standing polycrystalline diamond film deposition (cvd) -

机译:用于制造独立式多晶金刚石薄膜沉积物(cvd)的设备和方法-

摘要

In a system and a method for growing a diamond film, a cooling gas flows between a substrate and a substrate holder a plasma chamber, and a process gas flows into the plasma chamber. In the presence of plasma in the plasma chamber, a temperature distribution on the upper surface of the substrate and / or on a growth of the surface of the growing diamond film is controlled, wherein during the diamond film culturing the temperature distribution is controlled to a predefined temperature difference between the highest temperature and the lowest temperature of the temperature distribution have. The thus grown diamond film has a total thickness variation (term ttv) of 10%, & 5% or & 1%; and / or a birefringence of 0 to 100 nm / cm, 0 to 80 nm / cm, 0 to 60 nm / cm, 0 to 40 nm / cm, 0 to 20 nm / cm, 0 to 10 nm / cm or 0 to 5 nm / cm.
机译:在用于生长金刚石膜的系统和方法中,冷却气体在基板和基板保持器之间流过等离子体室,并且处理气体流入等离子体室。在等离子体腔室中存在等离子体的情况下,控制衬底上表面和/或生长的金刚石膜表面生长上的温度分布,其中在金刚石膜培养期间,将温度分布控制为预定义的最高温度与最低温度之间的温度差具有温度分布。如此生长的金刚石膜的总厚度变化(项ttv)<10%,<10%。 5%或& 1%;和/或双折射0至100 nm / cm,0至80 nm / cm,0至60 nm / cm,0至40 nm / cm,0至20 nm / cm,0至10 nm / cm或0至5纳米/厘米。

著录项

  • 公开/公告号DE112015005635T5

    专利类型

  • 公开/公告日2017-09-07

    原文格式PDF

  • 申请/专利权人 II-VI INCORPORATED;

    申请/专利号DE20151105635T

  • 申请日2015-12-11

  • 分类号C23C16/27;C23C16/44;C23C16/50;C23C16/511;C23C16/513;C23C16/56;

  • 国家 DE

  • 入库时间 2022-08-21 13:22:30

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号