INSPECTION PROCEDURE WITH SELECTABLE PIXEL DENSITY FOR ALL WAFER

摘要

Methods for inspecting an entire wafer for a semiconductor wafer are disclosed. One method comprises performing a measurement of a selected measurement parameter simultaneously over the measurement locations of the entire surface of the semiconductor wafer at a maximum location pixel density ρmax to obtain measurement data, wherein the total number of measurement location pixels obtained at the maximum measurement location pixel density ρmax is between 104 and 108. The method also includes defining a plurality of zones of the surface of the semiconductor wafer, wherein each of the zones has a location pixel density ρ, wherein at least two of the zones have different sized location location pixels and thus a different sized location location pixel density ρ. The method also includes processing the measurement data based on the plurality of zones and the corresponding measurement site pixel densities ρ. The processed measurement data may be used for statistical process control of the process used to form devices on the semiconductor wafer.