Provided are a silicon wafer surface passivation method and an N-type bifacial cell preparation method based on the silicon wafer surface passivation method. The silicon wafer surface passivation method comprises: processing a silicon wafer surface, so as to remove an oxide layer, borosilicate glass and/or phosphosilicate glass on the silicon wafer surface; in the irradiation of ultraviolet, blowing the processed silicon wafer surface by using ozone gas, so as to form silicon oxide of a first preset thickness on the processed silicon wafer surface, or soaking the silicon wafer in ozone-containing water so as to form silicon oxide of a first preset thickness on the processed silicon wafer surface. In the irradiation of ultraviolet, silicon oxide can be formed on the silicon wafer surface by blowing the silicon wafer surface by using ozone gas or soaking the silicon wafer in ozone-containing water, which can be complemented in a normal temperature, thereby greatly reducing costs; and the method is particularly suitable for large-scale industrialized production.
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