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PROJECTION EXPOSURE TOOL FOR MICROLITHOGRAPHY AND METHOD FOR MICRO-LITHOGRAPHIC IMAGING

机译:显微照相术的投影曝光工具和显微照相术的成像方法

摘要

PROBLEM TO BE SOLVED: To provide an apparatus and a method which enable a lateral position measurement on a wafer or a reticle with an adequate degree of complexity in shorter time.SOLUTION: A projection exposure tool (10) for micro-lithography for imaging mask structures (22) of an image-providing substrate (20) on a substrate (30) to be structured includes a measuring apparatus (40) configured to determine a relative position of measurement structures (32) disposed on a surface of one of the substrates (20; 30) in relation to one another in at least one lateral direction with respect to a substrate surface and to thereby simultaneously measure a number of measurement structures (32) disposed laterally offset in relation to one another.SELECTED DRAWING: Figure 1
机译:解决的问题:提供一种能够在较短的时间内以足够的复杂度在晶片或掩模版上进行横向位置测量的设备和方法。解决方案:用于微光刻的成像掩模的投影曝光工具(10)待构造的基板(30)上的图像提供基板(20)的结构(22)包括测量设​​备(40),该测量设备被配置为确定布置在基板之一的表面上的测量结构(32)的相对位置(20; 30)在相对于衬底表面的至少一个横向上彼此相对,从而同时测量相对于彼此横向偏移设置的多个测量结构(32)。图1

著录项

  • 公开/公告号JP2018165838A

    专利类型

  • 公开/公告日2018-10-25

    原文格式PDF

  • 申请/专利权人 CARL ZEISS SMT GMBH;

    申请/专利号JP20180131561

  • 发明设计人 GENELMAYER AXEL;JOCHEN HETZLER;

    申请日2018-07-11

  • 分类号G03F9/00;G03F7/20;G01B11/24;G01B11/00;

  • 国家 JP

  • 入库时间 2022-08-21 13:14:11

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