COMPOUND, RAW MATERIAL FOR THIN FILM FORMATION, RAW MATERIAL FOR THIN FILM FORMATION FOR ATOMIC LAYER DEPOSITION METHOD, AND PRODUCTION METHOD OF THIN FILM

摘要

PROBLEM TO BE SOLVED: To provide a raw material for thin film formation capable of producing a high-quality metal-containing thin film having a high vapor pressure and a low melting point by an atomic layer deposition method (ALD method).SOLUTION: A raw material for thin film formation contains a compound expressed by formula (1). (1) (R-Rare each independently H or a C1-4 straight/branched alkyl group; R-Rare each C1-4 straight/branched alkyl group; and Mis zirconium, hafnium or titanium).SELECTED DRAWING: None