GAS PIPING SYSTEM, CHEMICAL VAPOR GROWTH DEVICE, DEPOSITION METHOD AND MANUFACTURING METHOD OF SiC EPITAXIAL WAFER

摘要

PROBLEM TO BE SOLVED: To provide a gas piping system in which clogging of piping is suppressed.SOLUTION: A gas piping system is a run-vent type gas piping system configured to supply multiple gases to a reactor in which vapor growth is performed. The gas piping system comprises: multiple supply lines for feeding the multiple gases; an exhaust line connected from an exhaust port of the reactor to an exhaust pump; a run line branched from the multiple supply lines for supplying the multiple gases to the reactor; multiple vent lines branched from the multiple supply lines and connected to the exhaust line; and multiple valves provided in the branch points of the multiple supply lines for switching whether the gases are caused to flow to the run line side or the gases are caused to flow to the vent line side. The multiple vent lines are separated until reaching the exhaust line, and an inner diameter of the exhaust line is larger than an inner diameter of each of the multiple vent lines.SELECTED DRAWING: Figure 1