METHOD FOR EVALUATING QUALITY OF OXIDE SEMICONDUCTOR THIN FILM, METHOD FOR MANAGING QUALITY OF THE OXIDE SEMICONDUCTOR THIN FILM, AND DEVICE FOR MANUFACTURING SEMICONDUCTOR USING THE METHOD FOR EVALUATING QUALITY

摘要

PROBLEM TO BE SOLVED: To provide a method for accurately and simply evaluating stress tolerance by predicting the energy position of a defect in a bandgap of an oxide semiconductor thin film and the defect density thereof, and also to provide a method for managing quality of an oxide semiconductor thin film on the basis of the evaluation.;SOLUTION: Among calculated values obtained by substituting, into the following formula (1), a signal value for each elapsed time after the stoppage of excitation light as measured by a μ-PCD method and the corresponding elapse time, a peak value having the highest calculated value and a time constant (μs) for the peak value are selected, and the energy position of a defect level present in an oxide semiconductor thin film and the defect density thereof are estimated from the peak value and the time constant. x=signal value×elapsed time for signal value...formula (1) (In the formula, x: calculated value; signal value: reflectivity (mV) for microwaves; and elapsed time for signal value: elapsed time (μs) from stoppage of excitation light to signal value.);SELECTED DRAWING: None;COPYRIGHT: (C)2018,JPO&INPIT