x=(signal value)×(elapsed time for the signal value) Equation 1."/>
METHOD FOR EVALUATING QUALITY OF OXIDE SEMICONDUCTOR THIN FILM, METHOD FOR MANAGING QUALITY OF OXIDE SEMICONDUCTOR THIN FILM, AND DEVICE FOR MANUFACTURING SEMICONDUCTOR USING SAID METHOD FOR MANAGING QUALITY
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METHOD FOR EVALUATING QUALITY OF OXIDE SEMICONDUCTOR THIN FILM, METHOD FOR MANAGING QUALITY OF OXIDE SEMICONDUCTOR THIN FILM, AND DEVICE FOR MANUFACTURING SEMICONDUCTOR USING SAID METHOD FOR MANAGING QUALITY
METHOD FOR EVALUATING QUALITY OF OXIDE SEMICONDUCTOR THIN FILM, METHOD FOR MANAGING QUALITY OF OXIDE SEMICONDUCTOR THIN FILM, AND DEVICE FOR MANUFACTURING SEMICONDUCTOR USING SAID METHOD FOR MANAGING QUALITY
A quality evaluation method for an oxide semiconductor thin film includes: selecting a peak value having a largest calculated value and a time constant for the peak value among calculated values obtained by substituting each signal value for respective elapsed times after stopping excitation light irradiation and the corresponding elapsed time into the following Equation (1); and estimating, from the peak value and the time constant, an energy level of defect state and the defect density in the oxide semiconductor thin film:; x=(signal value)×(elapsed time for the signal value) Equation 1.
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机译：用于氧化物半导体薄膜的质量评估方法包括：在通过将每个信号值代入停止激发光照射之后的各个经过时间而获得的计算值中，选择具有最大计算值的峰值和该峰值的时间常数以及相应的时间。经过的时间变为下式（1）;根据该峰值和时间常数，推定氧化物半导体薄膜的缺陷状态的能级和缺陷密度。 <？in-line-formulae description =“在线公式” end =“线索”？> x =（信号值）×（信号值的经过时间）方程式1。<？in-line-formulae description =“ In-line Formulae” end =“ tail”？>
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