INSULATED GATE SEMICONDUCTOR ELEMENT DRIVING DEVICE AND INSULATED GATE TYPE SEMICONDUCTOR ELEMENT DRIVING SYSTEM

摘要

PROBLEM TO BE SOLVED: To provide a drive circuit for insulated gate semiconductor element capable of supplying a constant negative voltage during an off period even in a first cycle when a drive signal turns on after a long period of off-state with a simple configuration.SOLUTION: An insulated gate type semiconductor element driving device 10 includes: a drive circuit 100 which operates with a single power source; a first parallel circuit including a first capacitor 101 and a first Zener diode 102, which is connected to an output terminal of the drive circuit; a series circuit which is connected between the other end of the first parallel circuit and the ground of the drive circuit; and a resistance 106 which is connected between the other end of the first parallel circuit and the ground of the drive circuit. The series circuit is configured including a diode 103 and a second parallel circuit of the second capacitor 104 and the second Zener diode 105, which are connect in series. The voltage across the resistor is used as the output voltage for driving the insulated gate semiconductor element and the voltage across the first capacitor is superimposed in the negative direction of the output voltage.SELECTED DRAWING: Figure 1