NITRIDE FILM FORMED BY PLASMA-ENHANCED AND THERMAL ATOMIC LAYER DEPOSITION PROCESS

摘要

PROBLEM TO BE SOLVED: To provide a method which achieves the formation of etch-resistant silicon nitride films via ALD within typical thermal budget constraints.SOLUTION: The method comprises the step of depositing a nitride film using one or more plasma-enhanced atomic layer deposition cycles and one or more thermal atomic layer deposition cycles in a single reactor. The number of thermal atomic layer deposition cycles can be equal to or greater than the number of plasma-enhanced atomic layer deposition cycles. The silicon nitride film can be fine-tuned to allow for a more silicon-rich film with a greater refractive index. The plasma-enhanced atomic layer deposition cycles and the thermal atomic layer deposition cycles can be maintained at the same wafer temperature.SELECTED DRAWING: Figure 4