MANUFACTURING METHOD OF STRONTIUM NIOBIUM OXYNITRIDE FILM HAVING SMALL CARRIER DENSITY AND APPLICATION OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a SrNbON having a small carrier density.SOLUTION: The invention provides a method of growing a strontium niobium oxynitride film, the method including (a) a process of growing the strontium niobium oxynitride film having a carrier density of 1×10cmor less by a sputtering method on a strontium titanate substrate. An intention of the invention includes the following (I) to (V): (I) the strontium niobium oxynitride having a carrier density of 1×10cmor less; (II) the strontium niobium oxynitride film having a carrier density of 1×10cmor less; (III) an optical semiconductor substrate including the above strontium niobium oxynitride film; (IV) a hydrogen generation device including the optical semiconductor substrate; and (V) a hydrogen generation method using the optical semiconductor substrate.SELECTED DRAWING: Figure 1