Etching solution for multilayer film, etching concentration liquid and etching method

摘要

An etching solution for etching a multi-layer film of copper and molybdenum is provided to provide an etching liquid capable of reducing the amount of use.In the etching solution using the excess water, since the excess water is decomposed by the copper ions, a large amount of etching liquid is replenished.Hydrogen peroxideAcid organic acidAmine compoundHydrogen peroxide decomposition inhibitorAzoles andContains an anticoagulant containing aluminum saltsEthylene glycol monobutyl ether as the hydrogen peroxide decomposition inhibitor is contained at a rate of 0.4 mass% or more to 5% by mass or lessThe amine compound is nN-diethyl-1An etching solution for multilayer films characterized by 3 - propanediamineIt is possible to suppress the excess water decomposition rate even if the copper ion increases.The total amount of the etching solution can be reduced.