ETCHING SOLUTION FOR ETCHING MULTILAYER THIN FILM COMPRISING COPPER LAYER AND TITANIUM LAYER ETCHING METHOD USING SAID SOLUTION AND SUBSTRATE OBTAINED BY USING SAID METHOD

摘要

[Problem] An etchant for etching a multilayer thin film comprising a copper layer containing copper as a main component and a titanium layer containing as a main component of titanium laminated on a substrate using at least one selected from glass, silicon dioxide and silicon nitride, and the same A method for etching a multilayer thin film comprising a copper layer and a titanium layer used, and a substrate obtained by using the etching method are provided. [Solutions] (A) the concentration of hydrogen peroxide is 4.5 to 7.5 mass%, (B) the concentration of nitric acid is 0.8 to 6 mass%, (C) the concentration of the fluorine compound is 0.2 to 0.5 mass%, (D) the concentration of azoles The concentration is 0.14-0.3% by mass, (E) an alkylamine (E1) having at least one linear or branched C2-5 alkyl group optionally substituted with a methoxy group; Alkanolamine (E2) having one or two linear or branched hydroxyalkyl groups having 2 to 5 carbon atoms and optionally one or two linear or branched alkyl groups having 2 to 5 carbon atoms. ; diamine (E3) having a linear or branched alkylene group having 2 to 5 carbon atoms; And the concentration of one or more amine compounds selected from cyclohexylamine (E4) is 0.4 to 10 mass %, and (F) an aqueous solution containing a concentration of 0.005 to 0.1 mass % of the hydrogen peroxide stabilizer, and the pH value is 1.5 etchant of ~2.5.