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Write strategy improvements for read channel and pre-amp

机译:改进读通道和前置放大器的写策略

摘要

Systems and techniques for compensation to improve write signal controls for magnetic-medium-based storage devices, include an apparatus comprising: pre-compensation circuitry coupled with a controller to receive a data signal and a write-current control signal and to generate a write-current signal; the pre-compensation circuitry is configured to use different baseline write-current levels for the write-current signal after an overshoot write-current level used at polarity transitions of the write-current signal, and the pre-compensation circuitry is configured use a first baseline level of the different baseline write-current levels for a first type of magnet in the sequence of magnets and use a second baseline level of the different baseline write-current levels for a second type of magnet in the sequence of magnets, the first baseline level having a greater magnitude than the second baseline level, and the first type of magnet being shorter than the second type of magnet.
机译:用于补偿以改进基于磁介质的存储设备的写信号控制的系统和技术,包括一种装置,该装置包括:预补偿电路,与控制器耦合以接收数据信号和写电流控制信号并生成写信号。电流信号预补偿电路被配置为在写电流信号的极性转变处使用的过冲写电流电平之后,对写电流信号使用不同的基线写电流电平,并且预补偿电路被配置为使用第一磁体序列中第一种磁体的不同基线写电流水平的基线水平,并且磁体序列中第二种磁体使用不同基线写电流水平的第二基线水平,第一基线该第一电平的磁体具有比第二基准电平大的量值,并且第一类型的磁体比第二类型的磁体短。

著录项

  • 公开/公告号US10079033B1

    专利类型

  • 公开/公告日2018-09-18

    原文格式PDF

  • 申请/专利权人 MARVELL INTERNATIONAL LTD.;

    申请/专利号US201815880395

  • 发明设计人 MATS OBERG;

    申请日2018-01-25

  • 分类号G11B5/02;G11B5/09;G11B5/48;G11C7/10;G11C7/12;

  • 国家 US

  • 入库时间 2022-08-21 13:06:01

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