首页>
外国专利>
Approach to lowering extreme ultraviolet exposure dose for inorganic hardmasks for extreme ultraviolet patterning
Approach to lowering extreme ultraviolet exposure dose for inorganic hardmasks for extreme ultraviolet patterning
展开▼
机译:降低用于无机硬掩模的极端紫外线图案化的极端紫外线暴露剂量的方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
An extreme ultraviolet lithography pattern stack, including, an inorganic hardmask layer, an under layer on the inorganic hardmask layer, and a resist layer on the under layer, where the inorganic hardmask layer, under layer, and resist layer have a combined thickness in the range of about 8.5 nm to about 70 nm.
展开▼