APPROACH TO LOWERING EXTREME ULTRAVIOLET EXPOSURE DOSE FOR INORGANIC HARDMASKS FOR EXTREME ULTRAVIOLET PATTERNING

摘要

An extreme ultraviolet lithography pattern stack, including, an inorganic hardmask layer, an under layer on the inorganic hardmask layer, and a resist layer on the under layer, where the inorganic hardmask layer, under layer, and resist layer have a combined thickness in the range of about 8.5 nm to about 70 nm.