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Thin film material residual stress testing structure and method

机译:薄膜材料残余应力测试结构及方法

摘要

A thin film material residual testing structure comprises two groups of structures. The first group of structures comprises an electrostatic driven polysilicon cantilever beam, an asymmetrical cross beam made of thin film material to be tested and having an alignment structure, and a double-end fixed support beam made of the thin film material to be tested. The second group of structures is similar to the structure of the first group with the fixed support beam removed. A residual stress testing method includes separating the loading drive part of force from a residual stress testing structure made of the thin film material to be tested, designing the bending deflection of a control testing structure according to geometrical parameters, extracting the force applied on the residual stress testing structure and utilizing force and deflection to calculate the residual stress of the thin film material to be tested.
机译:薄膜材料残留测试结构包括两组结构。第一组结构包括静电驱动的多晶硅悬臂梁,由要测试的薄膜材料制成并具有对准结构的不对称横梁,以及由要测试的薄膜材料制成的双端固定支撑梁。第二组结构类似于第一组的结构,其中移除了固定支撑梁。残余应力测试方法包括将力的加载驱动部分与要测试的薄膜材料制成的残余应力测试结构分开,根据几何参数设计控制测试结构的弯曲挠度,提取施加在残余应力上的力应力测试结构,利用力和挠度计算待测薄膜材料的残余应力。

著录项

  • 公开/公告号US10088375B2

    专利类型

  • 公开/公告日2018-10-02

    原文格式PDF

  • 申请/专利权人 SOUTHEAST UNIVERSITY;

    申请/专利号US201515104095

  • 发明设计人 ZAIFA ZHOU;WEIHUA LI;LEI WANG;LU ZHANG;

    申请日2015-05-05

  • 分类号G01L1/00;G01L1/08;G01L5/00;H01L21/66;

  • 国家 US

  • 入库时间 2022-08-21 13:04:59

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