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On-chip stress relaxation testing method for freestanding thin film materials

机译:独立式薄膜材料的片上应力松弛测试方法

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摘要

A stress relaxation method for freestanding thin films is developed based on an on-chip internal stress actuated microtensile testing set-up. The on-chip test structures are produced using microfabrication techniques involving cleaning, deposition, lithography, and release. After release from the substrate, the test specimens are subjected to uniaxial tension. The applied load decays with the deformation taking place during relaxation. This technique is adapted to strain rates lower than 10-6/s and permits the determination of the strain rate sensitivity of very thin films. The main advantage of the technique is that the relaxation tests are simultaneously performed on thousands of specimens, pre-deformed up to different strain levels, for very long periods of time without monopolizing any external mechanical loading equipment. Proof of concept results are provided for 205-nm-thick sputtered AlSi0.01 films and for 350-nm-thick evaporated Pd films showing unexpectedly high relaxation at room temperature.
机译:基于片上内部应力驱动的微拉伸试验装置,开发了一种用于自支撑薄膜的应力松弛方法。片上测试结构是使用涉及清洁,沉积,光刻和剥离的微加工技术生产的。从基材上剥离后,对试样进行单轴拉伸。施加的载荷随着松弛过程中发生的变形而衰减。该技术适用于低于10-6 / s的应变速率,并允许确定非常薄的薄膜的应变速率灵敏度。该技术的主要优点是,可以在很长一段时间内对数千个预变形为不同应变水平的试样同时进行松弛测试,而不会垄断任何外部机械加载设备。对于205 nm厚的溅射AlSi0.01膜和350 nm厚的蒸发Pd膜,在室温下显示出意料之外的高松弛,提供了概念验证。

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