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Robust semiconductor power devices with design to protect transistor cells with slower switching speed
Robust semiconductor power devices with design to protect transistor cells with slower switching speed
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机译:耐用的半导体功率器件,其设计以较低的开关速度保护晶体管单元
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摘要
This invention discloses a power switch that includes a fast-switch semiconductor power device and a slow-switch semiconductor power device controllable to turn on and off a current transmitting therethrough. The slow-switch semiconductor power device further includes a ballasting resistor for increasing a device robustness of the slow switch semiconductor power device. In an exemplary embodiment, the fast-switch semiconductor power device includes a fast switch metal oxide semiconductor field effect transistor (MOSFET) and the slow-switch semiconductor power device includes a slow switch MOSFET wherein the slow switch MOSFET further includes a source ballasting resistor.
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