SUBSTRATE CONTACT LAND FOR AN MOS TRANSISTOR IN AN SOI SUBSTRATE, IN PARTICULAR AN FDSOI SUBSTRATE

摘要

A substrate contact land for a first MOS transistor is produced in and on an active zone of a substrate of silicon on insulator type using a second MOS transistor without any PN junction that is also provided in the active zone. A contact land on at least one of a source or drain region of the second MOS transistor forms the substrate contact land.