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METHOD TO CO-INTEGRATE SiGe AND Si CHANNELS FOR FINFET DEVICES
METHOD TO CO-INTEGRATE SiGe AND Si CHANNELS FOR FINFET DEVICES
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机译:FinFET器件的SiGe和Si通道共集成的方法
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摘要
A method for co-integrating finFETs of two semiconductor material types, e.g., Si and SiGe, on a bulk substrate is described. Fins for finFETs may be formed in an epitaxial layer of a first semiconductor type, and covered with an insulator. A portion of the fins may be removed to form voids in the insulator, and the voids may be filled by epitaxially growing a semiconductor material of a second type in the voids. The co-integrated finFETs may be formed at a same device level.
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