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Fin field effect transistor complementary metal oxide semiconductor with dual strained channels with solid phase doping
Fin field effect transistor complementary metal oxide semiconductor with dual strained channels with solid phase doping
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机译:带有固相掺杂的双应变通道的鳍式场效应晶体管互补金属氧化物半导体
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摘要
A method of forming semiconductor devices that includes forming an oxide that is doped with a punch through dopant on a surface of a first semiconductor material having a first lattice dimension, and diffusing punch through dopant from the oxide into the semiconductor material to provide a punch through stop region. The oxide may then be removed. A second semiconductor material may be formed having a second lattice dimension on the first semiconductor material having the first lattice dimension. A difference between the first lattice dimension and the second lattice dimension forms a strain in the second semiconductor material. A gate structure and source and drain regions are formed on the second semiconductor material.
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