TEMPLATE FORMATION FOR FULLY RELAXED SIGE GROWTH

摘要

The present disclosure generally relates to a device having a thin, low-defect, fully-relaxed silicon germanium (SiGe) layer, and methods of manufacture thereof. The methods generally include depositing a silicon oxide layer on a silicon layer, patterning the silicon oxide layer, exposing the silicon oxide layer to an etchant to form one or more recesses in the silicon layer and one or more faceted silicon oxide caps, and epitaxially growing a silicon germanium layer in the one or more recesses and over an apex of the one or more faceted silicon oxide caps. The device generally includes a silicon layer having one or more recesses defining one or more vertical extensions, one or more faceted silicon oxide caps on the one or more vertical extensions, and a silicon germanium layer in the one or more recesses and extending over an apex of the one or more faceted silicon oxide caps.