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Wide bandgap semiconductor device with vertical superjunction edge termination for the drift region
Wide bandgap semiconductor device with vertical superjunction edge termination for the drift region
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机译：具有用于漂移区的垂直超结边缘终端的宽带隙半导体器件
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摘要
A vertical superjunction edge termination structure for the drift region of wide bandgap semiconductor devices that provides a low resistance and high off voltage allowing the breakdown voltage of the superjunction drift region to be raised.
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