REMOVAL OF TRILAYER RESIST WITHOUT DAMAGE TO UNDERLYING STRUCTURE

摘要

A method for semiconductor processing includes removing, from a first region of a semiconductor device, a top layer of a trilayer photoresist structure formed in the first region and a second region of the semiconductor device to expose a middle layer of the trilayer photoresist structure in the first region. The middle layer is disposed between the top layer and a bottom layer of the trilayer photoresist structure. The middle layer and the bottom layer in the first region are removed to expose at least one first structure, the top layer in the second region being removed during the removal of the bottom layer in the first region. The first region is filled to protect the at least one first structure. The middle layer in the second region is removed while the at least one first structure remains protected.