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Lateral high voltage integrated devices having trench insulation field plates and metal field plates
Lateral high voltage integrated devices having trench insulation field plates and metal field plates
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机译:具有沟槽绝缘场板和金属场板的横向高压集成器件
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摘要
A high voltage integrated device includes a source region and a drain region disposed in a semiconductor layer and spaced apart from each other, a drift region disposed in the semiconductor layer and surrounding the drain region, a channel region defined in the semiconductor layer and between the source region and the drift region, a trench insulation field plate disposed in the drift region, a recessed region provided in the trench isolation field plate, a metal field plate disposed over the trench insulation field plate, and filling the recessed region, a gate insulation layer provided over the channel region and extending over the drift region and over the trench insulation field plate, and a gate electrode disposed over the gate insulation layer.
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